METHOD OF MANUFACTURING GATE OXIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate oxide layer of a semiconductor device is provided to minimize influence of a mobile ionic charge, an interface trapped charge, and a fixed oxide charge to a substrate by performing a thermal process using TLC(Trans Liquid Chlorine) before a wet oxidation process. CONSTITUTION: A TLC thermal process for a silicon substrate is performed under 800 degrees centigrade. The amount of TLC is about 110cc to 130cc. The TLC thermal process is performed during 25 to 35 minutes. A gate oxide layer is formed by performing a wet oxidation process of 800 degrees centigrade. At this time, HCl is formed by decomposing the used TLC. Cl-base of the HCl lowers the density of mobile ions by capturing the mobile ions. H-base of the HCL lowers an interface trapped charge due to dangling bond on a silicon surface.