| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to obtain a MOS(metal oxide semiconductor) transistor and an analog capacitor having a different gate insulating film more simply and reliably. CONSTITUTION: A field oxide film defining a first, a second and a third active regions is formed on a semiconductor substrate. After a first insulating film(120) and a first polysilicon film are formed on an entire surface, the first active region is exposed and a second gate insulating film is formed on the exposed active region. A second polysilicon film is formed on the second gate insulating film. By patterning the second polysilicon and the second insulating film so that the first active region and the first polysilicon film can be exposed, a first gate is formed on the first active region and a dielectric film and an upper electrode of a capacitor are formed on the first polysilicon film. By patterning the exposed first polysilicon film and the first insulating film, a second gate(155) is formed on the second active region and a lower electrode of a capacitor is formed on the third active region. Then, a source and a drain regions are formed.
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