INTERCONNECT FOR A SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An interconnection of a semiconductor device and a method for forming the same are provided to prevent failure of a via contact resistance and improve a via electromigration and a line electromigration by adding an anti-reactive layer and using an anti-reflective layer as an etching stop layer. CONSTITUTION: An aluminium lead(104) is formed on a barrier layer(102). An anti-reactive layer(106) is formed on the aluminium lead(104). An anti-reflective layer(107) is formed on the anti-reactive layer(106). An insulating layer(110) is formed on the anti-reflective layer(107). The insulating layer(110) has a via(112) in order to expose a part of a surface of the anti-reflective layer(107). A glue layer(114) is formed on the insulating layer(110) by including a lower portion and both sides of the via(112). A conductive layer plug is formed on the glue layer(114) in order to fill the via(112).