POLYSILICON/OXIDE OF SEMICONDUCTOR MATERIAL ETCHING METHOD

摘要

PURPOSE: A method for etching a polysilicon/oxide of a semiconductor device is provided to improve the reliability and the productivity of a semiconductor device by using only one system and reducing particles. CONSTITUTION: An oxide(2) and a polysilicon(3) are deposited sequentially on a substrate(1). An oxide for mask is deposited on the polysilicon(3). The oxide for mask is hardened by a thermal process. A photoresist is applied and patterned on the oxide for mask. A part of the oxide for mask is etched and patterned by using the patterned photoresist. The patterned photoresist is removed therefrom. An etching process is performed by using the patterned oxide for mask as an etching mask. An etching groove(6) is formed on a predetermined portion of the polysilicon(3) and the oxide(2) by etching the patterned oxide for mask and the polysilicon(3) and the oxide(2) in an etching ratio of 1 to 1.