发明名称 |
STRUCTURE OF PLASMA CVD CHAMBER |
摘要 |
PURPOSE: A process chamber structure is provided to improve the productivity and quality of an oxide film by installing a plurality of susceptors within a process chamber body and allowing the susceptors to rotate and revolve. CONSTITUTION: A process chamber structure includes a circular projection(22) having a given diameter(D). The circular projection(22) is downwardly projected from the upwardness to the downwardness at the central portion within the process chamber dolby(21). A heating plate(23) having an installation hole(23a) is adjacent to the circumference of the circular projection(22). A plurality of susceptors(25) into which wafers(24) are seated are installed in the installation hole(23a). The susceptors(25) can be rotated and revolved. A driver(26) rotates and revolves the susceptors(25). A plurality of heaters(27) applies a given heat to each of the susceptors(25). An electrode(29) ionizes a process gas supplied from a gas tube(28) positioned over the body(21). A shower(30) has a plurality of ejection holes(30a) for ejecting the gas ionized by the electrode(29).
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申请公布号 |
KR100253263(B1) |
申请公布日期 |
2000.05.01 |
申请号 |
KR19920001543 |
申请日期 |
1992.01.31 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
KIM, YONG-KWON |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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