发明名称 STRUCTURE OF PLASMA CVD CHAMBER
摘要 PURPOSE: A process chamber structure is provided to improve the productivity and quality of an oxide film by installing a plurality of susceptors within a process chamber body and allowing the susceptors to rotate and revolve. CONSTITUTION: A process chamber structure includes a circular projection(22) having a given diameter(D). The circular projection(22) is downwardly projected from the upwardness to the downwardness at the central portion within the process chamber dolby(21). A heating plate(23) having an installation hole(23a) is adjacent to the circumference of the circular projection(22). A plurality of susceptors(25) into which wafers(24) are seated are installed in the installation hole(23a). The susceptors(25) can be rotated and revolved. A driver(26) rotates and revolves the susceptors(25). A plurality of heaters(27) applies a given heat to each of the susceptors(25). An electrode(29) ionizes a process gas supplied from a gas tube(28) positioned over the body(21). A shower(30) has a plurality of ejection holes(30a) for ejecting the gas ionized by the electrode(29).
申请公布号 KR100253263(B1) 申请公布日期 2000.05.01
申请号 KR19920001543 申请日期 1992.01.31
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 KIM, YONG-KWON
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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