SEMICONDUCTOR LASER DIODE

摘要

PURPOSE: A semiconductor laser diode is provided to gain a high power by using a schottky barrier between a metal layer and a semiconductor layer and confining a current flowing. CONSTITUTION: An InGaP activated layer(4) is provided with p-type and n-type InGaAlP clad layer(3,5) on the top and bottom of n-type GaAs substrate(1). A ridge is formed on the part of the p-type InGaAlP clad layer(5). The ridge comprises p-type GaAs cap layer(7). A p-type metal layer(8) provides the activated layer(4) through the ridge with a current. The p-type metal layer(8) is formed on the p-type InGaAlP clad layer(8) exposed around the ridge. A schottky barrier is formed on a contact interface between the p-type InGaAlP clad layer(5) and the p-type metal layer(8) around the ridge.