METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to enhance a GOI(Gate Oxide Integrity) characteristic by improving a diffusion barrier formation process. CONSTITUTION: The first silicon oxynitride layer(12) as a barrier of a gate oxide layer is formed on an upper portion of a silicon substrate(11) by using high frequency NO+ ion plasma with a waveform of 10 to 20 MHz. The gate oxide layer(13) is deposited on an upper portion of the first silicon oxynitride layer(12) by performing a chemical vapor deposition process. The second silicon oxynitride layer(14) is formed on an upper portion of the gate oxide layer(13) by using the high frequency NO+ ion plasma with the waveform of 10 to 20 MHz. A conductive layer(17) is formed and patterned on an upper portion of the second silicon oxynitride layer(14).