| 摘要 |
PROBLEM TO BE SOLVED: To make formable good positive resist pattern having no roughness on its surface and to obtain both of high resolution and throughput by controlling the dissolving rate of a positive chemically amplifying resist without exposure in a developer to a specified rate or large. SOLUTION: The resist 3 consists of an acid producing agent, a resin having a protective group bonded to the OH group of an alkali-soluble resin, and a resin having decreased protection standard to a specified or lower. By decreasing the protection standard, the solubility of the resist 3 in an unexposed part can be increased, and the resist 3 film can be uniformly dissolved even in a region with a small dosage of X-rays 4 in the developing process. If the dissolving rate of the resist 3 in the unexposed part ranges of 0.2 nm/sec to 20 nm/sec, the formation of a rough state on the upper face of the positive resist pattern 3b can be suppressed, and the pattern has good pattern profile and realizes both of a high resolution and a throughput. |
