| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high-frequency integrated circuit, having advanced functions at low price for a high-frequency integrated circuit formed by stacking dielectric thin films. SOLUTION: An MIM type capacitor 102, a spiral inductor 103, and a thin- film resistance 104 are formed on a silicon substrate 101, a 1st BCB 105, a ground conductor 106, and 2nd and 3rd BCBs 107 are stacked thereupon to form a passive circuit, and an active element 111 is formed thereupon through flip-chip mounting for constituting the high-frequency integrated circuit, and since the active element is formed separately of the passive element, price can be lowered. Furthermore, a lumped constant passive element, used at relatively low frequencies and a concentrated constant passive element, used at high frequencies, can be isolated by the ground conductor and the passive elements can be arranged with high density, so that the passive element substrate can be made small-sized and low-priced.</p> |
