| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor memory device where a ferroelectric substance is used to be enhanced in degree of integration by a method wherein a cell is lessened in area so as to realize a finer cell structure. SOLUTION: A semiconductor memory device is equipped with a ferroelectric film, the ferroelectric film is pinched in between the two opposed electrodes for the formation of a capacitor, the capacitor is capable of holding binary data on a direction in which the ferroelectric film is polarized, a non-volatile semiconductor memory device is equipped with a structure where the capacitor is connected to the source or drain of a control transistor, the adjacent control transistors are possessed of bit lines in common, also the adjacent capacitors are possessed of plate lines in common, and the above capacitors are arranged above the control transistors. |
