| 摘要 |
PROBLEM TO BE SOLVED: To electrically connect an EQR metal electrode to an EQR polysilicon electrode without increasing a photolithography process. SOLUTION: When a source electrode 31 is connected to a base region 24 by a trench 27 made through a source region 25, an EQR metal electrode 40 is connected to an EQR polysilicon electrode 37 and an N+ type diffusion region 35 by the edge of the EQR polysilicon electrode 37 and the inside surface of a mesh-like trench 39 made through the N+ type diffusion region 35 and the N+ type diffusion region 35 at a portion 41 around the trench 39. When this MOSFET is cut away as a chip from a wafer in a scribing region D, the obverse and reverse surfaces of a cut surface E are at the same potential through work strain, the N+ type diffusion region 35 is exposed to the obverse surface of the cut surface E, and the EQR metal electrode 40 and the EQR polysilicon electrode 37 are surely at the same potential as a drain electrode 32. This can make the EQR metal electrode 40 and the EQR polysilicon electrode 37 fully function as a channel stopper.
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