| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growth furnace equipped with a material gas feeding means, where a reaction product deposited on the periphery of a wafer is restrained from contaminating the target surface of the wafer where an epitaxial film is deposited. SOLUTION: A pair of semiconductor wafers 10 are held, making their target growth surfaces face opposite to each other, and the entire outer circumferences of the wafers 10 are covered in a ring-shaped manner with a material gas feed nozzle 6, whose tip opening extends in an arc of an upward semicircle in matching with the outer circumference of the wafer and a material gas suction nozzle 7, whose tip opening confronts that of the nozzle 6 and extends as an arc of a downward semicircle, in matching with the outer circumference of the wafer. A reaction space which is independent of surroundings is formed between the target growth surfaces of the wafers 10, and the laminar flow of the material gas is formed between the material gas feed nozzle 6 and the material gas suction nozzle 7.
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