| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which can keep the stability of cells by compensating the alignment deviation of the gate electrode of a driver transistor in the length direction. SOLUTION: Common contacts 29, 30 are needed for connecting gate electrodes 23, 24, diffused layers 21, 22 and potential supply layer, and hence protrusions 25, 26 are provided at first ends of the gate electrodes 23, 24. Sheriffs 27, 28 are formed at an enlarged width d so as not to narrow the gate width in actual product manufacturing. The width d is set to the same value as a width c of the protrusions 25, 26. The distances (a) from the protrusions 25, 26 to driver transistors QD1, QD2 are set to the same value as distances b from the sheriffs 27, 28 to the driver transistors QD1, QD2. |
