| 摘要 |
PROBLEM TO BE SOLVED: To realize a gentle step between a memory cell part and a periphery circuit part and miniaturization by providing an electrode in an area near a boundary region between a memory cell part and a peripheral circuit part with a projection part with projects up inside a boundary region. SOLUTION: A gate electrode 17 with a projection part which is a gate electrode on a field oxide film 2 near a boundary region between a memory cell part and a peripheral circuit part has a part which projects up inside a boundary region (a). A plate electrode 8 which is near a boundary region between a memory cell part and a peripheral circuit part has a projection part 18 which projects up inside the boundary region (a). According to such a structure, the gate electrode 17 with a projection part and the projection part 18 of the plate electrode 8 overlap on the field oxide film 2 inside the boundary region (a). Therefore, a first interlaminar film 5 and a second interlaminar film 9 of the region (a) are formed to rise up and an inclination angle of a step part 15" can be made small. |
