发明名称 ANODIC BONDING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain an anodic bonding method in which air bubbles are not generated, in which it is not required to strip a lattice like conductive thin film and in which a uniform bonding operation can be performed efficiently by a method wherein the lattice like conductive thin film whose pattern is identical to that of the cutting margion of a substrate is formed on a boardlike glass when the substrate is cut so as to be changed into chips. SOLUTION: A conductive thin film 13 is formed on one face of a borosilicate glass 11 to be a film thickness if several hundred to several thousandÅby a sputtering technique or the like, and a lattice like conductive thin film pattern having a width of several tens to several hundredμm is obtained by a photolithographic technique or the like. That is to say, a single-crystal silicon substrate or a metal whose coefficient of thermal expansion is approximate to that of the borosilicate glass such as an Fe-Co-Ni-based alloy or the like is placed on a heater electrode, the borosilicate glass 11 on which the lattice-like conductive thin film 13 is formed is placed, and a needle electrode is brought into contact with the lattice like conductive thin film 13. The substrate is heated to, e.g. 300 to 700 deg.C via the heater electrode, and an anode voltage of 200 to 1000 V is applied to the needle electrode. After a bonding operation, the substrate is cut along the thin film 13 so as to be changed into chips. A lattice width is set at the cutting margin or lower of the substrate.
申请公布号 JP2000121468(A) 申请公布日期 2000.04.28
申请号 JP19980291825 申请日期 1998.10.14
申请人 FUJI ELECTRIC CO LTD 发明人 TANIGUCHI KATSUMI;GOTOU TOMOAKI;MATSUSHITA KOJI
分类号 G01L9/04;G01L9/00;H01L21/02;H01L29/84;(IPC1-7):G01L9/04 主分类号 G01L9/04
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