PRODUCTION OF ELECTROOPTICAL DEVICE AND PRODUCTION OF DRIVING SUBSTRATE FOR ELECTROOPTICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a display panel having high image quality, high definition a narrow frame, high efficiency and a large screen, to attain high productivity and easy adjustment of threshold value and to enable high-speed action and the enlargement of the screen due to reduced resistance by depositing a single crystal silicon layer by the hetero-epitaxial growth of silicon in a layer of a low melting point metal with a seed. SOLUTION: A single crystal silicon layer 7 is formed by hetero-epitaxial growth from a layer 6 of a low melting point metal containing molten polycrystal silicon with a crystalline sapphire film 50 formed on a substrate 1 as a seed. The single crystal silicon layer 7 is used as the bottom gate type MOSTFT of an electrooptical device such as display part-peripheral driving circuit integration type LCD. Since the single crystal silicon layer 7 exhibits sufficiently high mobility even to holes, a peripheral driving circuit which attains driving with electrons, holes or a combination of these is manufactured and a panel is obtained by integrating the circuit with TFT for a display part having an LDD structure such as nMOS or pMOS.