发明名称 CHEMICAL AMPLIFYING RESIST MATERIAL
摘要 PROBLEM TO BE SOLVED: To avoid the generation of a difference in the dimension of a resist pattern without depending on whether the mask pattern is coarse or dense, by incorporating a specified base resin, a photoacid producing agent and a dissolution accelerating agent consisting of a specified polymer resin. SOLUTION: This resist material contains a base resin expressed by formula I, a photoacid producing agent and a dissolution accelerating agent consisting of a polymer resin. The polymer resin is alkali-soluble and is included by 0.1 to 15 wt.% to the base resin with 0% protecting rate, and has 5,000 to 20,000 mol.wt. In the formula I, R is a protecting group expressed by formula II or the like and m and n are natural numbers. Since the dissolving rate in the resist in an exposed part and on the interface of the unexposed part is faster in a coarse pattern that in a dense fine pattern, only the dissolving rate in the dense pattern is increased by adding the dissolution accelerating agent to the resist material. Therefore, by increasing the rate only in a dense pattern, difference in the dissolving rate between a dense pattern and a coarse pattern can be eliminated.
申请公布号 JP2000122292(A) 申请公布日期 2000.04.28
申请号 JP19980289789 申请日期 1998.10.12
申请人 NEC CORP 发明人 YAMANA SHINJI
分类号 G03F7/004;G03F7/028;G03F7/039;G03F7/20;H01L21/027 主分类号 G03F7/004
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