| 摘要 |
PROBLEM TO BE SOLVED: To improve throughput by performing a hydrogen sintering treatment of a wafer, having a large aperture of 8 inches or more without deteriorating, in particular the characteristics of an MOS semiconductor device. SOLUTION: Wafers, in which MOS semiconductor elements are formed, are set one by one in treatment equipment by using sheet heat-treating equipment. In a hydrogen sintering treatment, hydrogen is introduced in the equipment, and the wafer temperature is raised to a constant value (step ST1), a hydrogen-sintering treatment is performed when the wafer temperature becomes higher than or equal to a constant value (step ST2), then the temperature is decreased lower than or equal to the constant value in the heat-treating equipment (step ST3), and after that, the wafer is taken out (step ST4). The sintering period at a time is about 3 minutes, so that the throughput is improved as compared with the conventional diffusion furnace treatment, and temperature response and temperature uniformity of the wafer are also improved. After the sintering process, the wafer is cooled once and then is taken out, the damage to the MOS interfacial level or the like in the preceding process can be recovered in a short time.
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