发明名称 SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, LIQUID CRYSTAL DEVICE USING THE SAME AND LIQUID CRYSTAL DISPLAY
摘要 <p>PROBLEM TO BE SOLVED: To form fine through-holes, reduce the pixel size and make fine pixels by forming a second insulation film form which contact hole-forming regions are removed on a first insulation film, and processing the first insulation film like openings in the removed regions of the second insulation film in a self- aligned manner. SOLUTION: On an SOG layer 18 a P-SiO layer of 4000Åthick is deposited to form a first insulation layer 8, a Ti layer of 3000Åthick is deposited as a light shield layer 7, regions for forming through-holes 28 are removed to form like a desired shape, a second insulation layer 21 is deposited for forming pixel electrodes 12 and capacitances with the light shield layer 7, the second insulation layer 21 of the through-holes 23 is removed, and a third insulation layer 9 for isolating the pixels is deposited. Using the second insulation layer 21 as an etching stopper layer, the third insulation layer 9 is machined in a form for isolating the pixel electrodes and etched to form through-holes 23 in a self-aligning manner at the openings of the second insulation layer 21.</p>
申请公布号 JP2000124313(A) 申请公布日期 2000.04.28
申请号 JP19990217214 申请日期 1999.07.30
申请人 CANON INC 发明人 NAKAZAWA TORU
分类号 G09F9/30;G02F1/136;G02F1/1365;G02F1/1368;G09F9/00;H01L21/768;H01L21/8238;H01L27/092;(IPC1-7):H01L21/768;H01L21/823 主分类号 G09F9/30
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