摘要 |
<p>PROBLEM TO BE SOLVED: To form fine through-holes, reduce the pixel size and make fine pixels by forming a second insulation film form which contact hole-forming regions are removed on a first insulation film, and processing the first insulation film like openings in the removed regions of the second insulation film in a self- aligned manner. SOLUTION: On an SOG layer 18 a P-SiO layer of 4000Åthick is deposited to form a first insulation layer 8, a Ti layer of 3000Åthick is deposited as a light shield layer 7, regions for forming through-holes 28 are removed to form like a desired shape, a second insulation layer 21 is deposited for forming pixel electrodes 12 and capacitances with the light shield layer 7, the second insulation layer 21 of the through-holes 23 is removed, and a third insulation layer 9 for isolating the pixels is deposited. Using the second insulation layer 21 as an etching stopper layer, the third insulation layer 9 is machined in a form for isolating the pixel electrodes and etched to form through-holes 23 in a self-aligning manner at the openings of the second insulation layer 21.</p> |