摘要 |
<p>PROBLEM TO BE SOLVED: To realize both the same chip size and passage of the centers of dicing lines for a blade and to obtain greater number of chips. SOLUTION: A semiconductor wafer is provided with a plurality of dicing lines DXa and DXb and a plurality of dicing lines DYa and DYb, which are respectively provided side by side in the horizontal direction and the vertical direction at intervals L1, and semiconductor element formation regions CR1, which are sectioned by the dicing lines DXa, DXb, DYa and DYb and are respectively formed with a semiconductor element. Here, the dicing lines in the horizontal direction and the dicing lines in the vertical direction are formed alternately in a width La and in a width Lb which is wider than the width La and are provided side by side in such a way that the width La and the width Lb are repeated in order.</p> |