| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing apparatus where a substrate is less contaminated with organic substance, when ion are implanted. SOLUTION: In a process where processed substrates 2 mounted on a disk 1 are irradiated with an ion beam 3, oxygen 5 is fed preferably at 1×10-5 to 1×10-6 Torr of partial pressure into a chamber where the disk 1 is housed. The processed substrates 2 are irradiated with vacuum ultraviolet rays 4.
|
