| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a capacitor excellent in electric properties and a manufacturing method thereof. SOLUTION: A manufacturing method includes a first process where a lower electrode 30 is formed on a base board 10; a second process where a tantalum oxide film 32 is formed on the lower electrode 30; a third process where the base board 10 is kept at a temperature of above 400 deg.C, an ozone-containing oxidizing atmosphere is irradiated with ultraviolet rays, and the tantalum oxide film 32 is oxidized; a fourth process where the tantalum oxide film 32 is crystallized in an oxygen-containing oxidizing atmosphere; and a fifth process where an upper electrode 34 is formed on the tantalum oxide film 32. |
