发明名称 SEMICONDUCTOR INTEGRATED DEVICE
摘要 PROBLEM TO BE SOLVED: To stably and surely connect electrically projected electrodes and a transparent electrode formed on a glass substrate together. SOLUTION: A surface protective film 2 formed on an Al electrode 1 is selectively removed at its plural locations to expose surface parts of the Al electrode 1 and to form recesses 7a in the film 2. Barrier metals 3 are coated on the parts of the electrode 1 at the recess positions of the film 2, Au bumps which are projected electrodes 4 are formed on the barrier metals 3 and are formed in their surfaces with a plurality of recessed grooves 7. The size of the underside recesses 7a is adjusted, so that recesses 7 can each receive therein one or plural conductive particles coated with an insulating film 5b in a film ACF6 (anisotropic conductive film), and the ACF6 is sandwiched between a transparent electrode 14 formed on a glass substrate 13 and the projected electrodes 4, to form a laminate. By thermally compressing the laminate, the insulating films 5b of the particles 5a in the ACF6 are broken to obtain conductive particles 5, whereby the transparent electrode 14 and projected electrodes 4 are energized with each other via the conductive particles 5.
申请公布号 JP2000124263(A) 申请公布日期 2000.04.28
申请号 JP19980295709 申请日期 1998.10.16
申请人 FUJI ELECTRIC CO LTD 发明人 OSHIKAWA KAZUSHI
分类号 H01L21/60;G02F1/1345;(IPC1-7):H01L21/60;G02F1/134 主分类号 H01L21/60
代理机构 代理人
主权项
地址