| 摘要 |
PROBLEM TO BE SOLVED: To prevent erroneous writing at the time of start of a power source of a semiconductor memory having a ferroelectric capacitor, and the like. SOLUTION: This device is provided with a switching transistor ST which makes a bit line BL and a plate line PL continuity by applying the prescribed voltage to plural word lines WL based on the prescribed signal PON from a power-on-reset circuit 5, connecting bit lines BL connected to each memory cell and memory cell capacitors C, and applying the control signal PON1 to a gate, until the prescribed potential is stabilized when the prescribed potential is supplied to bit lines BL or plate lines PL at the time of applying a power source.
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