| 摘要 |
PROBLEM TO BE SOLVED: To obtain a fine pattern formation method in which a fine pattern can be formed by a method wherein a lift-off resist pattern is formed on a first base layer, a second base layer is formed on the surface of the first base layer, the lift-off resist pattern is stripped off and a first-base-layer exposed part is etched and worked. SOLUTION: A lift-off resist pattern 2 is formed on a first base layer 1. The resist pattern has an undercut, and it is formed by a novolak-based two- layer resist process or a single-layer resist process. Then, a second base layer 3 is formed on the base layer 1 which contains the lift-off resist pattern 2. Then, the second base layer is left, the lift-off resist pattern is removed, and a first-base-layer part 1a corresponding to the formation part of the resist pattern is exposed. In addition, the first-base-layer exposed part 1a is etched. As a result, a fine pattern whose dimension controllability is superior can be worked easily with a high resolution of 0.3μm or lower. |
