发明名称 CHEMICALLY AMPLIFYING RESIST MATERIAL, PHOTOSENSITIVE RESIN COMPOSITION AND USE METHOD OF THAT COMPOSITION FOR PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a resist material having enough sensitivity to light or radiation such as electron beams and X-rays by polymerizing monomers containing specified compds. SOLUTION: Monomers containing compds. expressed by the formula are polymerized. In the formula, A is a group containing polymerizable unsatd. bonds R1 is-OH,-COOH,-(CH2)m-COOH or the like, R2 is-OR3,-SR4, Cl or the like and n is an integer 1 to 4, and R3, R4 are each a 1-10C hydrocarbon group or hydrogen atom, and m is an integer 1 to 6. The monomers containing the compds. expressed by the formula consist of 1 to 100 mol.%, or 10 to 90 mol.% or the compds. or the formula or and 0 to 99 mol.%, or 10 to 90 mol.% or compds. copolymerizabel with the compds. of the formula. If the amt. of the compds. of the formula is too little, an alkali-soluble material is hardly obtd.
申请公布号 JP2000122291(A) 申请公布日期 2000.04.28
申请号 JP19980287661 申请日期 1998.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 OSHIDA ATSUSHI;KUMADA TERUHIKO;FUJINO ATSUKO
分类号 H01L21/027;C08F12/14;C08F16/14;C08F20/10;G03F7/039 主分类号 H01L21/027
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