| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture of a MOS transistor for preventing a decrease in the carrier mobility of a channel and having high performance and high reliability by destroying or reducing fixed positive charges remaining in a gate insulation film made of constituent elements of silicon, oxygen, and nitrogen. SOLUTION: An SiON film (gate insulation film) 3 having a thickness of 3.0 nm is formed and then an ultraviolet light irradiation process is performed in which ultraviolet light having energy larger than the band gap of the insulation film 3 is applied to the SiON film 3 to generate electrons in the insulation film 3 to join the electrons to immobile positive charges in the insulation film 3. This can effectively destroy positive fixed charges easily generated in the gate insulation film 3 to improve the mobility of channel carriers. Therefore, even if the gate insulation film 3 for preventing an alloy spike of Boron is thin, it can realize a MOS transistor having an intrinsically expected performance and high reliability of the performance from this film thickness.
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