SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To increase the packing density of a transistor without impairing desired device characteristics. SOLUTION: An N-type source region 16 and an N-type drain region 18 are formed in a P-well 14 functioning as the substrate region of an NMOS transistor. A first contact plug 34 in conduction with the N-type source region 16 and a second contact plug 36 in conduction with the N-type drain region 16 are made. The N-type source region 16 is made so that it develops a short circuit with the P-well 14. The N-type drain region 18 is made so that it does not develop a short circuit with the P-well 14. The N-type source region 16 is made smaller than the N-type drain region 18.