发明名称 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC-FIELD SENSOR
摘要 PROBLEM TO BE SOLVED: To improve operability between an element and external magnetic field by making a resistance changing rate represented by a specific formula to be negative when a specified external magnetic field is applied, and constituting the element in a manner that the absolute value of the resistance changing rate has a value of specific percentage or more. SOLUTION: A magnetoresistive effect element 1 has a laminated film structure in which a first magnetic layer 10 and a second magnetic layer 20 are joined with each other like a cross with a non-magnetic layer 30 interposed, and a resistance at the time when a current is applied vertically to the surface of the laminated film is made to change according to the application of external magnetic field. Assuming that the resistance value at the time when the external magnetic field Hs is applied is Rs and the resistance value at the time when the external magnetic field H (|Hs|>|H|) is applied is R, a resistance changing rate represented by a formula, (R-Rs)/Rs, is made negative, and its absolute value is made to be 5% or more. Thus, the operability between the element and external magnetic field can be improved.
申请公布号 JP2000124522(A) 申请公布日期 2000.04.28
申请号 JP19980309489 申请日期 1998.10.15
申请人 TDK CORP 发明人 SATO YUICHI;SHINOURA OSAMU;MIYAUCHI DAISUKE
分类号 G11B5/39;G01R33/09;H01L43/08;(IPC1-7):H01L43/08 主分类号 G11B5/39
代理机构 代理人
主权项
地址
您可能感兴趣的专利