| 摘要 |
PROBLEM TO BE SOLVED: To uniformize temp. distribution in a heat treatment process in a photolithography using a large substrate. SOLUTION: A proximity type heat treating furnace mounts a TFT(thin film transistor) array substrate 1 on the top of a hot plate 2, using a plurality of pins 4. A hot wall 3 has a double-layer structure composed of an intake hot wall chamber 3a and exhausting hot wall chamber 3b. For baking the TFT array substrate 1, the hot plate 2 is heated to a prescribed temp., and air is exhausted from a box through an exhaust port 3c, resulting in the outside air entering through an intake port 3d for the pressure balance in the box. The heat of the air flowing in the hot wall chamber 3a moves to the air flowing in the hot wall chamber 3b due to the heat exchange action through the double layer, thereby warming and flowing the outside air sucked into the box of the hot wall 3. Thus the surface temp. of the TFT array substrate 1 can be uniformized.
|
