| 摘要 |
PROBLEM TO BE SOLVED: To restrict fluctuations of etching characteristics ranging over a long period as small as possible and prevent etching from stopping, by a method wherein there is specified a temperature in a region forming a vacuum wall of a vacuum treatment chamber in which a gas species in which a degree of plasma dissociation is about middle and which is composed of carbon and fluorine sufficiently generates in a plasma. SOLUTION: If microwaves are irradiated from a periphery of an antenna 5, a resonance electric field passes through a dielectric 8 in a space upward of the antenna 5 and is introduced into an etching chamber. Furthermore, a capacity-coupling electric field occurs between the antenna 5 and an electrode 9, and this is an efficient plasma occurrence source. A frequency band of the microwaves is selected so that an electronic temperature of a plasma can be set at low temperatures of 0.25 eV to 1 eV, i.e., 300 MHz to 1 GHz. A temperature in a region forming a vacuum wall of a vacuum treatment chamber in which a gas species in which a degree of plasma dissociation is about middle and which is composed of carbon and fluorine sufficiently generates in a plasma is controlled to be 10 deg.C to 120 deg.C. |
