| 摘要 |
PROBLEM TO BE SOLVED: To prevent peeling of a storage node and generation of a leak current by providing a clearance to an adhesion improved layer provided between a lower electrode of a projection structure and a lower connection electrode, leaving a part thereof as a cavity, and providing an insulated and separated capacitor between an upper layer electrode and an adhesion improved layer. SOLUTION: An Ru film 27 is etched to a specified shape and a storage node 29 of a projection shape is formed. An exposed part of a TiN film 26 is etched and an adhesion improved layer 28 with a slit-like clearance in a side wall part is formed. A Ta2O5 film 30 and an Ru film 31 are deposited one by one and a cell plate 33 and a capacitor dielectric film 32 are formed by etching them to a specified shape. The capacitor dielectric film 32 goes into an inner part of a clearance and comes into contact with a side wall of the adhesion improved layer 28, the cell plate 33 goes into an area near an entrance inside a clearance and is formed, and a part of a clearance becomes a cavity 34. As a result, it is possible to prevent peeling of the storage node 29 without flow of a leak current. |
