| 摘要 |
<p>PROBLEM TO BE SOLVED: To compensate for combination defect of a non-single crystalline semiconductor thin film and restrain characteristic deterioration of the element, by a method which is easy and excellent in cost performance in a manufacturing process of an element (such as a thin film field effect transistor, an optical conduction element and a photoelectromotive element) based on a structure wherein a non-single crystalline semiconductor thin film is deposited on a substrate. SOLUTION: After a gate electrode 28 is formed by vacuum deposition or sputtering on a supporting substrate 26, an i-type amorphous silicon film 30 is deposited by thermal CVD of 650 deg.C of silane and in this stage, the structure body is immersed in high pressure water of 110 deg.C for 15 hours. Then, an insulation film 32, a source metallic film 34 and a drain metallic film 36 are deposited by vacuum deposition or sputtering and a source and a drain are formed by sputtering.</p> |
