| 摘要 |
PROBLEM TO BE SOLVED: To accurately define the area of a doping region, without increasing the chip size by setting the boundary position of the ion implanting region to a spot corresponding to a linear gradient region at the end of a resist pattern. SOLUTION: About a region covered with a resist pattern 7, the thickness of the resist pattern 7 is so set that the position at which the distance from the top face of the pattern 7 to the surface of a Si substrate is equal to Rp+3ΔRp exists in a linear gradient region at the end of the resist pattern 7 wherein Rp is the thickness at which the implanted ion concentration is maximum and 3ΔRp is the thickness at which a quantity corresponding to 3ρof the implanted ions. The position at which the distance from the top face of the pattern 7 to the surface of a Si substrate is equal to Rp+3ΔRp may be regarded as the boundary position of an impurity ion implanted region determined by the impurity concentration of the substrate and the projection range in the impurity ion implanting process.
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