| 摘要 |
PROBLEM TO BE SOLVED: To obtain a DRAM cell capacitor excellent in electrical properties and a manufacturing method thereof. SOLUTION: A method of manufacturing a stack-type charge storage cell capacitor includes following steps. The steps are indicated as follows. A first step where a polysilicon storage node 15 is formed on a gate provided on a semiconductor substrate; a second step where a titanium film is deposited on the polysilicon storage node 15; a third step where a product formed in the preceding step is thermally treated in a nitrogen atmosphere, the titanium film is turned into a titanium nitride film 16, and a tantalum pentoxide 18 is deposited on the titanium nitride film 16; a fourth step where a product formed in the preceding step is thermally treated in an oxygen atmosphere at a temperature of 700 to 900 deg.C, and the titanium nitride film 16 under the tantalum pentoxide film 18 is converted to a titanium oxide film 17; and a fifth process where an electrode material is deposited and formed into a plate electrode. |
