| 摘要 |
<p>PROBLEM TO BE SOLVED: To make a definite gradation displaying level suppliable to a liquid crystal by making a channel forming area contain crystalline silicon and show the peak of the Raman spectrum on a specific low-frequency side. SOLUTION: When a silicon film is annealed, the film shifts to a highly ordered state from an amorphous structure and partially represents a crystalline state. Particularly, relatively highly ordered areas after the silicon film is formed tend to become crystalline states. However, these areas are coupled with each other by the silicon existing between the areas, the silicon in the areas and in the space between the areas pull each other. When observation is made by laser Raman spectroscopy, a peak which shifts to the low frequency side from the peak of 522 cm-1 of single-crystal silicon is observed. Consequently, the coating film represents a state where no substantial grain boundary RB exists. Since carriers easily move between clusters through anchored spots, the mobility of the carriers becomes higher than that obtained from polycrystalline silicon in which GBs definitely exist.</p> |
