| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact infrared sensor with high sensitivity, high speed thermal responsiveness, high precision, and excellent mass production for facilitating a countermeasure to the rapid change of surrounding temperature. SOLUTION: This pyroelectric infrared sensor is provided with a semiconductor substrate 1, lower insulating film 2 formed on one surface of the semiconductor substrate 1, diaphragms 4 constituted of a pit 3 formed by removing one part of the semiconductor substrate so that the lower insulating film 2 can be left and the lower insulating film 2 covering the pit 3, lower electrode 5 formed on the diaphragm 4, pyroelectric element 8 constituted of the laminated body of a pyroelectric thin film 6 and an upper electrode 7, upper insulating film 9 formed on the pyroelectric element 8, thermistor thin film 10 for detecting compensating temperature formed on the upper insulating film 9, and comb- shaped electrode 11 formed on the thermistor thin film 10.
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