| 摘要 |
PROBLEM TO BE SOLVED: To improve a charged particle beam projection exposure in pattern transfer accuracy. SOLUTION: Image fields 61 and 65 as projection images in a transfer small region are mutually linked together on a wafer, whereby the entire transfer regions are exposed. A pattern 56 to be transferred is divided into complementary patterns 57 and 59, to form original plates of two kinds for light exposure that is carried out twice. The patterns 57 and 59 are restrained from intersecting joints 63 and 67 of the fields 61 and 65 on the original plates, so that the exposure patterns can be prevented from degrading in control accuracy of the exposure line width at joints.
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