| 摘要 |
PROBLEM TO BE SOLVED: To obtain a reverse staggered type thin film transistor element which is formed to a thin film while good ON/OFF characteristic is maintained. SOLUTION: A transparent insulation substrate 101, a gate electrode 102 and a gate insulation film 103 are formed one by one and an intrinsic amorphous silicon film 104, whose surface roughness is at most 10 nm and an n+-type amorphous silicon film whose thickness is 3 nm or more and 10 nm or less are formed thereon. Then, both the intrinsic amorphous silicon film and the n+-type amorphous silicon film are processed to an island shape. Then, in the thin film transistor after a source/drain electrode is formed on the n+-type amorphous silicon film, an insulation modified layer whose part wherein the intrinsic amorphous silicon film and the source/drain electrode do not overlap each other is insulated by plasma treatment is provided in the n+-type amorphous silicon film.
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