| 摘要 |
PROBLEM TO BE SOLVED: To improve process efficiency in forming the emitter and collector of a horizontal bipolar transistor and the base of a vertical bipolar transistor, in a process of manufacturing a semiconductor device which has the horizontal and vertical bipolar transistors on the semiconductor substrate. SOLUTION: An Si film is grown on a base region 3-a of a horizontal bipolar and on a collector region 3-b of a vertical bipolar at the same time to form an emitter region 9-a and a collector region 9-c of the horizontal bipolar and a base region 9-b of the vertical bipolar. The opening diameter of the horizontal bipolar is made smaller than that of the vertical bipolar.
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