发明名称 PROXIMITY EXPOSURE METHOD FOR IRRADIATING DIAGONALLY WITH LIGHT
摘要 PROBLEM TO BE SOLVED: To embody a proximity exposure method capable of projecting mask patterns to a prescribed region of a work even if light is made incident on a mask diagonally. SOLUTION: The work W is arranged on the mask M, on which the mask patterns are formed apart a prescribed gap disposed therefrom. The work W is irradiated with light diagonally from a lamp house 3 via the mask M to exposure the mask patterns onto the work W. A controller 10 calculates the misalignment quantity between the projection position of the mask patterns on the work W when the mask M is perpendicularly irradiated with the light and the projection position of the mask patterns on the work W when the mask M is irradiated diagonally with the light in accordance with the incident angleδof the light to the mask M, the irradiation angleϕof the light to the mask M and the gap quantity G between the mask M and the work W. The controller executes the alignment of the mask M and the work W in accordance with the calculated misalignment quantity and exposes the mask patterns onto the work W.
申请公布号 JP2000122302(A) 申请公布日期 2000.04.28
申请号 JP19980289041 申请日期 1998.10.12
申请人 USHIO INC 发明人 SUZUKI SHINJI
分类号 H01L21/027;G02F1/1337;G03F7/20;G03F9/00;(IPC1-7):G03F7/20;G02F1/133 主分类号 H01L21/027
代理机构 代理人
主权项
地址