发明名称 HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To restrain a substrate to be processed from slipping, when the substrate to be processed or the wafer is heat treated in a heat treating furnace at a temperature of 950 deg.C or higher. SOLUTION: A heat treatment boat 1 has a structure, where holding grooves 27 are provided to three to six supports 21 to 26 at regular intervals in the vertical direction, and wafers W are supported on the upper faces of the holding grooves 27. The heat treatment boat 1 mounted with the wafers W is introduced into a heat treatment oven 4, and the surface roughness of the wafer holding the holding groove 27 is set 10μm or smaller. When the holding surface of the groove 27 is lessened in surface roughness in this manner, a wafer W is restrained from slipping off, even when the wafer W is heat treated in an atmosphere kept at a temperature, for example, of 950 deg.C or higher.
申请公布号 JP2000124143(A) 申请公布日期 2000.04.28
申请号 JP19980316856 申请日期 1998.10.20
申请人 TOKYO ELECTRON LTD 发明人 NISHIMURA KAZUAKI
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
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