| 摘要 |
PROBLEM TO BE SOLVED: To decrease the occurrence of a spotted unevenness in thickness of a thin film by a method wherein, by use of a substrate of which a surface is flat or after being corrected so as to flatten it, it is ground by use of a whetstone containing an abrasive. SOLUTION: A semiconductor substrate 1 is mainly constituted by a plurality of patterns 3 forming a part of a functional element of a semiconductor device on a substrate surface 2, and a thin film 4 covering the patterns 3 and a region of the substrate surface 2 where the patterns 3 is not present. The semiconductor substrate having such the thin film normally has small ups and downs of about 100 nm or a warpage of a magnitude of about 10 to 200μm. A substrate backside 8 of the semiconductor substrate 1 having such the thin film 4 is retained by fixing means 6 provided in movement means 7, to correct a shape of the substrate surface 2 to be flat. Namely, the movement means 7 and an abrasive plate 10 are chemically and mechanically ground by supplying a slurry containing abrasive particles or a dispersant and arranging it between the abrasive plate 10 and the thin film 4.
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