| 摘要 |
PROBLEM TO BE SOLVED: To prevent a silicon oxide film from being produced on a source interface, to avoid a contact resistance reducing series parasitic capacity, to improve a capacitor C forming region in degree of freedom, and to improve a semiconductor device in degree of integration, by a method wherein a ferroelectric film is subjected to oxygen annealing so as to be improved in crystallinity, and oxygen is blocked by a conductive reaction preventing film. SOLUTION: A ferroelectric capacitor C structure is present on a source region 23 between a gate electrode 23 and a local oxide film 26. A ferroelectric film 29 is pinched between an upper electrode 30 and a lower electrode 31, and a conductive reaction preventive film 32 is provided between the lower electrode 31 and the source region 23. The conductive reaction preventive film 32 in formed of TiN, TiON, TiW, or MoSi.
|
