| 摘要 |
PROBLEM TO BE SOLVED: To obtain an amplification type solid-state image sensing device of high sensitivity by forming an optical pipe-like structure formed of a light screening material between an opening part of a light screening film and a semiconductor board surface. SOLUTION: A source and a drain of an amplification transistor are connected to an outside of an image sensing region by a second metallic wiring 7 formed in a first metallic wiring 6 and an upper layer of the first metallic wiring 6 interposing an insulation film 10. A light screening film 8 formed of a light screening material is formed in an upper layer of the second metallic wiring 7 interposing the insulation layer 10. An opening part for a photodiode is formed in the light screening film 8. The insulation layer 10 is etched to self-align to an opening part of the light screening film 8, and a second light screening film 9 is deposited conformally by an isotropical deposition process. The second light screening film 9 is etched back and a pipe-like structure of the second light screening film 9 consisting of a sidewall is obtained. As a result, enough sensitivity improvement effect can be obtained.
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