| 摘要 |
PROBLEM TO BE SOLVED: To perform minute etching at high etching rate. SOLUTION: A quartz discharge tube 2 passes through a chamber 9, and a jetting hole 21 of a nozzle part 20 of the quartz discharge tube 2 is directed towards a silicon wafer W. Radicals R are generated by plasma discharging the gas which is fed to a quartz discharge tube 2 by a plasma generating part 1. Also, an exhaust section 6 has an exhaust pipe 60 arranged in the vicinity of the nozzle 20, in such a manner that the jetting hole 21 of the nozzle part 20 protrudes to the side of the silicon wafer W from a suction hole 60a, and the reaction product G, generated when the silicon wafer W is locally etched by the radicals R, is sucked from the suction hole 60a of the exhaust pipe 60 and exhausted to outside a chamber 9. Preferably, an etching region limiting section 7, which feeds N2 gas of a prescribed pressure which suppresses the diffusion of the radicals R which are jetted from the jetting hole 21 of the nozzle part 20, is provided.
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