| 摘要 |
PROBLEM TO BE SOLVED: To restrain a resist film from varying in thickness due to temperature changes, even if a heating processing apparatus is increased in size to cope with the enlargement of a substrate. SOLUTION: A first and a second cooling processing device groups, 70 and 80, each possessed of various cooling processing apparatuses that cool down a wafer W are arranged near a resist-applying apparatus group 20, and a first and a second heating processing apparatus group, 90 and 100, each possessed of various heating processing apparatus that heat a wafer W are arranged near to a development processing device group 30. A first transfer device 50 is disposed between the cooling processing apparatus groups 70 and 80, a second transfer apparatus 60 is disposed between the heating processing apparatus groups 90 and 100, and a delivery pad 40, where a wafer W is be freely mounted is provided between the transfer devices 50 and 60. The first transfer apparatus 50 transfers a wafer W between the resist application apparatus group 20, the delivery pad 40, and the cooling processing apparatus groups 70 and 80. |
