VARIABLE-WAVELENGTH LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURE

摘要

A variable-wavelength light-emitting device comprises an active layer of low crystal distortion and stable properties composed of direct gap semiconductor having a magnetic moment. A semiconductor light-emitting device has a structure in which an active layer (spheres of beta -FeSi2) (2") composed of semiconductor silicide or semiconductor silicide doped with a transition metal is formed in a p-n junction having a greater forbidden band than the semiconductor silicide.