摘要 |
A silicon oxide layer is formed on a phosphorus doped surface region of a silicon semiconductor body by steam treatment, there being an enhanced growth rate of the silicon oxide on the phosphorus doped region enabling, for example, the provision of a low temperature steam treatment, and/or the production, possibly within an aperture in an already provided silicon oxide layer less than 3000A thick, of a thin silicon oxide layer, so that impurity concentration gradients within the semiconductor body are not caused to change by a significant extent and the surface concentration of phosphorus within the region is not significantly depleted.
|