发明名称 |
Silicon carbide sliding material |
摘要 |
<p>A slide material has a mainly coarse grained SiC matrix of pressure-less sintered SiC with a bimodal particle size distribution formed by prismatic SiC crystallite plates, 50-90 (preferably 60-90) vol.% of which have 100-1500 mu length and 10-50 (preferably 10-40) vol.% of which have 5 to less than 100 mu length. Preferably, the SiC crystallites consist of alpha silicon carbide and up to 2 wt.% Al and/or B. Also claimed is a process for producing the above slide material by mixing finely divided alpha SiC powder with sintering additives (preferably aluminium nitride and/or boron), pressing aids and optionally pore formers, pressing to green bodies, preheating at up to 1000 degrees C in a protective gas atmosphere, sintering at 2040-2090 degrees C to produce sintered bodies of 90-99 % theoretical density and then tempering at a grain growth temperature of 2100-2220 degrees C for 20-60 mins.</p> |
申请公布号 |
EP0850898(B1) |
申请公布日期 |
2000.04.26 |
申请号 |
EP19970122392 |
申请日期 |
1997.12.18 |
申请人 |
ELEKTROSCHMELZWERK KEMPTEN GMBH |
发明人 |
GREIM, JOCHEN, DR.;THALER, HUBERT;FUNDUS, MICHAEL |
分类号 |
F16C33/24;C04B35/565;C04B35/573;F16C33/04;(IPC1-7):C04B35/573 |
主分类号 |
F16C33/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|